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砷化镓 Gallium arsenide (GaAs)

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

参考资料:

https://en.wikipedia.org/wiki/Gallium_arsenide

https://zh.wikipedia.org/wiki/砷化鎵

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